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| to-25 1 -3l plastic-encapsulate transistors 2SC4003 transistor (npn) features high h fe low v ce(sat) maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 400 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 5 v i c collector current -continuous 0.2 a p c collector power dissipation 1 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol t est condi tions m in t yp max u nit collector-base breakdown voltage v (br)cbo i c =10a,i e =0 400 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 400 v emitter-base breakdown voltage v (br)ebo i e =10a,i c =0 5 v collector cut-off current i cbo v cb =300v,i e =0 0.1 a emitter cut-off current i ebo v eb =4v,i c =0 0.1 a dc current gain h fe v ce =10v,i c =50ma 60 200 collector-emitter saturation voltage v ce(sat) i c =50ma,i b =5ma 0.6 v base-emitter saturation voltage v be(sat) i c =50ma,i b =5ma 1 v transition frequency f t v ce =30v,i c =10ma 70 mhz classification of h fe rank d e range 60-120 100-200 to-251 -3l 1. base 2. collector 3. emitter 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,sep,2013
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